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Carbon materials display intriguing physical properties, including superconductivity and highly anisotropic thermal conductivity found in graphene. Compressive strain can induce structural and bonding transitions in carbon materials and create new carbon phases, but their interplay with thermal conductivity remains largely unexplored. We investigated the in situ high-pressure thermal conductivity of compressed graphitic phases using picosecond transient thermoreflectance and first-principles calculations. Our results show an anomalous thermal conductivity that peaks to 260  W/mK at 15–20 GPa but drops to 3.0  W/mK at ∼35  GPa. Together with complimentary in situ Raman and x-ray diffraction results, the abnormal thermal conductivity trend of compressed carbon is attributed to phonon-mediated conductivity influenced by interlayer buckling and 𝑠⁢𝑝2 to 𝑠⁢𝑝3 transition and, subsequently, the formation of 𝑀-carbon nanocrystals and amorphous carbon. Strain-induced structural and bonding variations provide a wide-range manipulation of thermal and mechanical properties in carbon materials. 

Boron arsenide (BAs) is a covalent semiconductor with a theoretical intrinsic thermal conductivity approaching 1300 W/m K. The existence of defects not only limits the thermal conductivity of BAs significantly but also changes its pressure-dependent thermal transport behavior. Using both picosecond transient thermoreflectance and femtosecond time-domain thermoreflectance techniques, we observed a non-monotonic dependence of thermal conductivity on pressure. This trend is not caused by the pressure-modulated phonon–phonon scattering, which was predicted to only change the thermal conductivity by 10%–20%, but a result of several competing effects, including defect–phonon scattering and modification of structural defects under high pressure. Our findings reveal the complexity of the defect-modulated thermal behavior under pressure. 

Abstract Two distinct stacking orders in ReS₂are identified without ambiguity and their influence on vibrational, optical properties and carrier dynamics are investigated. With atomic resolution scanning transmission electron microscopy (STEM), two stacking orders are determined as AA stacking with negligible displacement across layers, and AB stacking with about a one‐unit cell displacement along theaaxis. First‐principles calculations confirm that these two stacking orders correspond to two local energy minima. Raman spectra inform a consistent difference of modes I & III, about 13 cm⁻¹for AA stacking, and 20 cm⁻¹for AB stacking, making a simple tool for determining the stacking orders in ReS₂. Polarized photoluminescence (PL) reveals that AB stacking possesses blueshifted PL peak positions, and broader peak widths, compared with AA stacking, indicating stronger interlayer interaction. Transient transmission measured with femtosecond pump–probe spectroscopy suggests exciton dynamics being more anisotropic in AB stacking, where excited state absorption related to Exc. III mode disappears when probe polarization aligns perpendicular tobaxis. The findings underscore the stacking‐order driven optical properties and carrier dynamics of ReS₂, mediate many seemingly contradictory results in the literature, and open up an opportunity to engineer electronic devices with new functionalities by manipulating the stacking order.